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| SMD Type Silicon NPN Epitaxial 2SC2618 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors IC Unit: mm +0.1 2.4-0.1 Features Low frequency amplifier. +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating 35 35 4 500 150 150 -55 to +150 Unit V V V mA mW Electrical Characteristics Ta = 25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current DC current gain Collector-emitter saturation voltage Base-emitter voltage Symbol Testconditons Min 35 35 4 0.5 100 10 0.2 0.64 0.6 V V 320 Typ Max Unit V V V iA V(BR)CBO IC = 10iA , IE = 0 V(BR)CEO IC = 1mA , RBE = V(BR)EBO IE = 10iA , IC = 0 ICBO hFE1 hFE2 VCB = 20V, IC = 0 VCE = 3V , IC = 10mA VCE = 3V , IC = 500mA VCE(sat) IC = 150mA , IB = 15mA VBE VCE = 3V , IC = 10mA hFE Classification Marking hFE RC 100 200 RD 160 320 +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1 |
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